1 http://www.fujielectric.com/products/semiconductor/ 4MBI400VG-060R-50 igbt modules igbt module (v series) 600v / 400a / igbt, rb-igbt 4 in one package features higher effciency optimized a (t-type) -3 level circuit low inductance module structure featuring reverse blocking igbt (rb-igbt) applications inverter for motor drive uninterruptible power supply power conditioner maximum ratings and characteristics absolute maximum ratings (at tc=25c unless otherwise specifed) items symbols conditions maximum ratings units t1, t2 collector-emitter voltage v ces 600 v gate-emitter voltage v ges 20 v collector current igbt i c continuous t c =80c 400 a i cp 1ms t c =80c 800 fwd -i c 400 -i c pulse 1ms 800 collector power dissipation p c 1 device 1135 w t3, t4 collector-emitter voltage v ces 600 v gate-emitter voltage v ges 20 v collector current i c continuous t c =80c 400 a i cp 1ms t c =80c 800 collector power dissipation p c 1 device 1560 w junction temperature t j 150 c case temperature t c 125 storage temperature t stg -40 ~ +125 isolation voltage between terminal and copper base (*1) v iso ac : 1min. 2500 vac screw torque mounting (*2) - m5 or m6 3.5 n m terminals (*3) - m5 3.5 note *1: all terminals should be connected together during the test. note *2: recommendable value : 2.5-3.5 nm (m5 or m6) note *3: recommendable value : 2.5-3.5 nm (m5)
2 igbt modules 4MBI400VG-060R-50 http://www.fujielectric.com/products/semiconductor/ 3 electrical characteristics (at tj= 25c unless otherwise specifed) items symbols conditions characteristics units min. typ. max. t1, t2 zero gate voltage collector current i ces v ge = 0v, v ce = 600v - - 2.0 ma gate-emitter leakage current i ges v ce = 0v, v ge = 20v - - 400 na gate-emitter threshold voltage v ge (th) v ce = 20v, i c = 400ma 6.2 6.7 7.2 v collector-emitter saturation voltage v ce (sat) (chip) v ge = 15v i c = 400a t j = 25c - 1.60 1.85 v t j =125c - 1.90 - v ce (sat) (terminal) v ge = 15v i c = 400a t j = 25c - 1.79 2.10 t j =125c - 2.09 - input capacitance c ies v ce = 10v, v ge =0v, f = 1mhz - 27 nf turn-on time t on sw mode : a v cc = 400v i c = 400a v ge = 15v r g = +10/-39 l s = 80nh - 0.95 1.90 s t r - 0.65 1.30 t r (i) - 0.30 - turn-off time t off - 3.20 6.40 t f - 0.20 0.50 forward on voltage v f (chip) i f = 400a t j = 25c - 1.60 1.85 v t j =125c - 1.50 - v f (terminal) i f = 400a t j = 25c - 1.72 2.05 t j =125c - 1.62 - reverse recovery time t rr sw mode : a v cc = 400v i f = 400a v ge = 15v r g = +10/-39 - - 0.35 s t3, t4 zero gate voltage collector current i ces v ge = 0v, v ce = 600v - - 4.0 ma gate-emitter leakage current i ges v ce = 0v, v ge = 20v - - 800 na gate-emitter threshold voltage v ge (th) v ce = 20v, i c = 400ma 5.5 6.5 7.5 v collector-emitter saturation voltage v ce (sat) (chip) v ge = 15v i c = 400a t j = 25c - 2.45 2.80 v t j =125c - 2.60 - v ce (sat) (terminal) v ge = 15v i c = 400a t j = 25c - 2.67 3.10 t j =125c - 2.82 - input capacitance c ies v ce = 10v, v ge = 0v, f = 1mhz - 26 - nf turn-on time t on sw mode : b v cc = 200v i c = 400a v ge = 15v r g = +2.2/-39 l s = 54nh - 0.35 0.70 s t r - 0.25 0.50 t r (i) - 0.15 - turn-off time t off - 1.75 3.50 t f - 0.15 0.35 reverse recovery time t rr sw mode : c v cc = 200v i c = 400a v ge = 15v r g = +10/-39 - - 0.35 s internal inductance l p-n - 40 - nh p-m - 33 - m-n - 33 - thermal resistance characteristics items symbols conditions characteristics units min. typ. max. thermal resistance (1device) r th(j-c) t1, t2 igbt - - 0.11 c/w t1, t2 fwd - - 0.22 t3, t4 rb-igbt - - 0.08 contact thermal resistance (1device) (*4) r th(c-f) t1, t2 with thermal compound - 0.025 - t3, t4 - 0.013 - note *4: this is the value which is defned mounting on the additional cooling fn with thermal compound (thermal conductivity = 1w/m k).
2 3 igbt modules 4MBI400VG-060R-50 http://www.fujielectric.com/products/semiconductor/ defnitions of switching time l v cc i c v ce r g v ge v ge v ce i c 0v 0a 0v 10% 10% 90% 90% 0v t rr i c i rr t r (i) t r t on v ce t off t f 90% 10% m p u n t1 g t1/t4 e t2 g t2 e c t1 t2 t4 g t4 t3 g t3 t3 e vcc2 vcc2 vcc1 sw mode sw: connect to drive circuit and input gate signal on: bias voltage of gate +15v off: reverse bias voltage of gate -15v vcc2=vcc1/2 off u-n b off off t3 t4 a load l off off off off m-u off c off off m-u p-u off u-n sw off off sw sw sw sw on on on on sw t1 t2 p-u off defnitions of switching mode
4 igbt modules 4MBI400VG-060R-50 http://www.fujielectric.com/products/semiconductor/ 5 characteristics (representative) collector - emitter voltage: v ce [v] [ t1, t2 ] dynamic gate charge (typ.) v cc =300v, i c =400a, t j =25c [ t1, t2 ] g a te - em itte r v o ltage: v ge [5v/di v ] c o lle c t o r - em itte r v o ltage: v ce [100 v /di v ] gate - emitter voltage: v ge [v] [ t1, t2 ] t j = 25c / chip collector-emitter voltage vs. gate-emitter voltage (typ.) c o ll e c t o r c u rr en t: i c [a ] [ t1, t2 ] collector current vs. collector-emitter voltage (typ.) c o ll e c t o r c u rr en t: i c [a ] c o lle c t o r - em itte r v o ltage: v ce [v ] [ t1, t2 ] collector current vs. collector-emitter voltage (typ.) t j = 25c / chip collector-emitter voltage: v ce [v] capacitance vs. collector-emitter voltage (typ.) c apa c itan c e: c ies , c oes , c res [nf ] gate charge: q g [c] v ge =0v, f= 1mhz, t j = 25c v ge =15v / chip c o ll e c t o r c u rr en t: i c [a ] collector-emitter voltage: v ce [v] [ t1, t2 ] t j = 125c / chip collector current vs. collector-emitter voltage (typ.) collector-emitter voltage: v ce [v] 0 100 200 300 400 500 600 700 800 0 1 2 3 4 5 v ge =20v 15v 12v 10v 8v 0 100 200 300 400 500 600 700 800 0 1 2 3 4 5 15v 12v 10v 8v v ge =20v 0 100 200 300 400 500 600 700 800 0 1 2 3 4 5 t j =125c t j =25c 0 2 4 6 8 5 10 15 20 25 i c =800a i c =400a i c =200a 0.1 1.0 10.0 100.0 0 10 20 30 -20 -15 -10 -5 0 5 10 15 20 -2500 -1500 -500 500 1500 2500 -400 -200 0 200 400 v ge v ce c ies c res c oes
4 5 igbt modules 4MBI400VG-060R-50 http://www.fujielectric.com/products/semiconductor/ s w itching loss : e on , e off , e rr [ m j/pulse ] [ sw mode a] v cc =400v, v ge =15v, r g =+10/-39? (t1, t2) switching loss vs. collector current (typ.) collector current: i c [a] forward current : i f [a] r e verse recovery current : i rr [ a ] r e verse recovery ti m e : t rr [ nsec ] reverse recovery characteristics (typ.) ] 2 t , 1 t [ v cc =400v, v ge =15v, r g =+10/-39?(t1, t2) [ sw mode a ] switching time vs. collector current (typ.) v cc =400v, v ge =15v, r g =+10/-39?, t j =125c (t1, t2) gate resistance : r g [?] (t1, t2) [ sw mode a ] switching loss vs. gate resistance (typ.) [ sw mode a ] forward current vs. forward on voltage (typ.) f o r w ard current : i f [ a ] chip forward on voltage : v f [v] v cc =400v, i c =400a, v ge =15v, t j =125c switching time vs. collector current (typ.) gate resistance : r g [?] (t1, t2) v cc =400v, i c =400a, v ge =15v s w itching ti m e : t on , t r , t off , t f [ nsec ] collector current: i c [a] s w itching loss : e on , e off , e rr [ m j/pulse ] s w itching ti m e : t on , t r , t off , t f [ nsec ] 10 100 1000 10000 0 0 1 0 1 1 t off 10 100 1000 10000 0 100 200 300 400 500 600 700 t off 0 50 100 150 0 100 200 300 400 500 600 700 e on (125c) e on (25c) e off (125c) e rr (125c) e rr (25c) e off (25c) t r t f t on t r t f t on 0 100 200 1 10 100 1000 err(25c) e rr (125c) e off (25c) e on (125c) e on (25c) e off (125c) 0 100 200 300 400 500 600 700 800 0 1 2 3 4 t j =125c t j =25c 10 100 1000 0 100 200 300 400 500 600 t rr (125c) i rr (125c) t rr (25c) i rr (25c) ] 2 t , 1 t [
6 igbt modules 4MBI400VG-060R-50 http://www.fujielectric.com/products/semiconductor/ 7 collector-emitter voltage : v ce [v] c o lle ct or curren t: i c [ a ] reverse bias safe operating area (max.) v ge =15v, -v ge Q 15v, r g R +10 / -39?, t j Q 125c (t1, t2) t1, t2 (terminal) [ sw mode c ] v cc =200v, i c =400a, v ge =15v, t j =125c switching time vs. collector current (typ.) gate resistance : r g [?] (t1, t2) collector current: i c [a] v cc =200v, i c =400a, v ge =15v s w itching ti m e : t on , t r , t off , t f [ nsec ] collector current: i c [a] [ sw mode c ] switching time vs. collector current (typ.) v cc =200v, v ge =15v, r g =+10/-39?, t j =125c (t1, t2) gate resistance : r g [?] (t1, t2) v cc =200v, v ge =15v, r g =+10/-39? (t1, t2) switching loss vs. collector current (typ.) s w itching loss : e on , e off , e rr [ m j/pulse ] s w itching loss : e on , e off , e rr [ m j/pulse ] s w itching ti m e : t on , t r , t off , t f [ nsec ] [ sw mode c ] switching loss vs. gate resistance (typ.) [ sw mode c] 10 100 1000 10000 0 0 1 0 1 1 t off 10 100 1000 10000 0 100 200 300 400 500 600 700 t off t r t f t on t r t f t on 0 50 100 1 10 100 1000 e rr (25c) e rr (125c) e off (25c) e on (125c) e on (25c) e off (125c) 0 25 50 75 0 100 200 300 400 500 600 700 e on (125c) e on (25c) e off (125c) e rr (125c) e rr (25c) e off (25c) 0 200 400 600 800 1000 0 200 400 600 800 rbsoa (repetitive pulse)
6 7 igbt modules 4MBI400VG-060R-50 http://www.fujielectric.com/products/semiconductor/ [ t3, t4 ] capacitance vs. collector-emitter voltage (typ.) v ge =0v, f= 1mhz, t j = 25c c o ll e c t o r c u rr en t: i c [a ] collector-emitter voltage: v ce [v] c o ll e c t o r c u rr en t: i c [a ] gate - emitter voltage: v ge [v] collector-emitter voltage: v ce [v] [ t3, t4 ] collector current vs. collector-emitter voltage (typ.) v ge =15v / chip [ t3, t4 ] collector current vs. collector-emitter voltage (typ.) t j = 25c / chip collector-emitter voltage: v ce [v] c apa c itan c e: c ies , c oes , c res [nf ] collector - emitter voltage: v ce [v] c o lle c t o r - em itte r v o ltage: v ce [v ] gate charge: q g [nc] [ t3, t4 ] dynamic gate charge (typ.) v cc =300v, i c =400a, t j =25c c o ll e c t o r c u rr en t: i c [a ] g a te - em itte r v o ltage: v ge [5v/di v ] c o lle c t o r - em itte r v o ltage: v ce [100 v /di v ] [ t3, t4 ] collector current vs. collector-emitter voltage (typ.) t j = 125oc / chip [ t3, t4 ] collector-emitter voltage vs. gate-emitter voltage (typ. ) t j = 25oc / chip 0 100 200 300 400 500 600 700 800 0 1 2 3 4 5 v ge =20v 15v 12v 10v 8v 0 100 200 300 400 500 600 700 800 0 1 2 3 4 5 15v 12v 10v 8v v ge =20v 0 100 200 300 400 500 600 700 800 0 1 2 3 4 5 t j =25c t j =125c 0.01 0.1 1 10 100 0 10 20 30 c ies c oes c res 0 2 4 6 8 5 10 15 20 25 i c =800a i c =400a i c =200a -20 -15 -10 -5 0 5 10 15 20 -1000 -500 0 500 1000 1500 -400 -200 0 200 400 v ge v ce
8 igbt modules 4MBI400VG-060R-50 http://www.fujielectric.com/products/semiconductor/ 9 [ sw mode b ] switching time vs. collector current (typ.) v cc =200v, v ge =15v, r g =+2.2/-39?, t j =125c (t3, t4) collector-emitter voltage : v ce [v] [ sw mode b ] v cc =200v, v ge =15v, r g =+2.2/-39? (t3, t4) switching loss vs. collector current (typ.) reverse bias safe operating area (max.) v ge =15v,-v ge Q 15v, r g R +2.2 / -39?, t j Q 125c (t3, t4) transient thermal resistance (max.) c o llector current: i c [ a ] s w i tching loss : e on , e off , e rr [ m j/pulse ] collector current: i c [a] s w itching loss : e on , e off , e rr [ m j/pulse ] s w itching ti m e : t on , t r , t off , t f [ nsec ] t3, t4 (terminal) gate resistance : r g [?] (t3, t4) s w itching ti m e : t on , t r , t off , t f [ nsec ] collector current: i c [a] v cc =200v, i c =400a, v ge =15v [ sw mode b ] v cc =200v, i c =400a, v ge =15v, t j =125c [ sw mode b ] switching loss vs. gate resistance (typ.) gate resistance : r g [?] (t3, t4) switching time vs. collector current (typ.) 0 10 20 30 40 50 60 0 100 200 300 400 500 600 700 e on (125c) eon(25c) e off (125c) e rr (125c) e rr (25c) e off (25c) 0 200 400 600 800 1000 0 200 400 600 800 rbsoa (repetitive pulse) 10 100 1000 10000 0 0 1 0 1 1 t off t on t r t f 0 50 100 1 10 100 1000 e rr (25c) e rr (125c) e off (25c) e on (125c) e on (25c) e off (125c) 10 100 1000 10000 0 100 200 300 400 500 600 700 t off t r t f t on 0.001 0.01 0.1 1 0.001 0.01 0.1 1 pulse width : p w [sec] t herm al res i st ans e: r th(j-c) [ c/ w ] fwd igbt rb-igbt [ s e c ] 0 . 002 3 0 . 030 1 0 . 059 8 0 . 070 8 r t h i g b t 0 . 0118 0 0 . 0299 1 0 . 0422 6 0 . 0260 3 [ c / w ] f w d 0 . 0236 0 0 . 0598 3 0 . 0845 2 0 . 0520 6 r b - i g b t 0 . 0085 8 0 . 0217 6 0 . 0307 3 0 . 0189 3
8 9 igbt modules 4MBI400VG-060R-50 http://www.fujielectric.com/products/semiconductor/ m p u n t1 g t1/t4 e t2 g t2 e c t1 t2 t4 g t4 t3 g t3 t3 e rb-igbt reverse blocking igbt label weight: 460g (typ.) outline drawings, mm equivalent circuit schematic
10 igbt modules 4MBI400VG-060R-50 http://www.fujielectric.com/products/semiconductor/ warning 1. this catalog contains the product specifcations, characteristics, data, materials, and structures as of may 2011. the contents are subject to change without notice for specifcation changes or other reasons. when using a product listed in this catalog, be sur to obtain the latest specifcations. 2. all applications described in this catalog exemplify the use of fuji's products for your reference only. no right or license, either express or implied, under any patent, copyright, trade secret or other intellectual property right owned by fuji electric co., ltd. is (or shall be deemed) granted. fuji electric co., ltd. makes no representation or warranty, whether express or implied, relating to the infringement or alleged infringement of other's intellectual property rights which may arise from the use of the applications described herein. 3. although fuji electric co., ltd. is enhancing product quality and reliability, a small percentage of semiconductor products may become faulty. when using fuji electric semiconductor products in your equipment, you are requested to take adequate safety measures to prevent the equipment from causing a physical injury, fre, or other problem if any of the products become faulty. it is recommended to make your design failsafe, fame retardant, and free of malfunction. 4. the products introduced in this catalog are intended for use in the following electronic and electrical equipment which has normal reliability requirements. ? computers ? oa equipment ? communications equipment (terminal devices) ? measurement equipment ? machine tools ? audiovisual equipment ? electrical home appliances ? personal equipment ? industrial robots etc. 5. if you need to use a product in this catalog for equipment requiring higher reliability than normal, such as for the equipment listed below, it is imperative to contact fuji electric co., ltd. to obtain prior approval. when using these products for such equipment, take adequate measures such as a backup system to prevent the equipment from malfunctioning even if a fuji's product incorporated in the equipment becomes faulty. ? transportation equipment (mounted on cars and ships) ? trunk communications equipment ? traffc-signal control equipment ? gas leakage detectors with an auto-shut-off feature ? emergency equipment for responding to disasters and anti-burglary devices ? safety devices ? medical equipment 6. do not use products in this catalog for the equipment requiring strict reliability such as the following and equivalents to strategic equipment (without limitation). ? space equipment ? aeronautic equipment ? nuclear control equipment ? submarine repeater equipment 7. copyright ?1996-2011 by fuji electric co., ltd. all rights reserved. no part of this catalog may be reproduced in any form or by any means without the express permission of fuji electric co., ltd. 8. if you have any question about any portion in this catalog, ask fuji electric co., ltd. or its sales agents before using the product. neither fuji electric co., ltd. nor its agents shall be liable for any injury caused by any use of the products not in accordance with instructions set forth herein.
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